40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

40 V, 10 A NPN high power bipolar transistor

40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

封装/外壳：SC-100，SOT-669 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 10A LFPAK56 PWRSO8 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Red

LMR60410 3V to 36V, 1A, Synchronous, Buck Converter Optimized for High Power Density, Low EMI, and Low Output Capacitance

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Wide operating input voltage: 3V to 36V (42V absolute maximum) • Pin programmable output voltage options available in fixed 3.3V/ADJ and 5V/ADJ – Adjustable output voltage range from 1