40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

40 V, 10 A NPN high power bipolar transistor

40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

40 V, 10 A NPN high power bipolar transistor

LMR60410 3V to 36V, 1A, Synchronous, Buck Converter Optimized for High Power Density, Low EMI, and Low Output Capacitance

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Wide operating input voltage: 3V to 36V (42V absolute maximum) • Pin programmable output voltage options available in fixed 3.3V/ADJ and 5V/ADJ – Adjustable output voltage range from 1

LMR60410-Q1 3V to 36V, 1A, Automotive, Synchronous Buck Converter Optimized for High Power Density, Low EMI, and Low Output Capacitance

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • AEC-Q100 qualified for automotive applications – Device temperature grade 1: –40°C to 125°C ambient operating temperature range • Wide operating input voltage: 3V to 36V (42V absolute