Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package Applications:- • Motor and relay drivers • d.c. to

Dual N-channel enhancement mode TrenchMOSTM transistor

FEATURES • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package GENERAL DESCRIPTION Dual N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Motor and relay drivers •

Dual N-channel enhancement mode TrenchMOS transistor

Dual N-channel TrenchMOS intermediate level FET

Dual N-channel TrenchMOS intermediate level FET

1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and ben

PHN210T - Dual N-channel TrenchMOS intermediate level FET

Dual N-channel enhancement mode

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