1.1 General description

Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

 Suitable for high frequency

applications due to fast switching

characteristics

 Suitable for logic level gate drive

sources

 Suitable for low gate drive sources

1.3 Applications

 DC-to-DC converters

 Logic level translators

 Motor and relay drivers