TrenchMOS standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHD16N03T in SOT428 (D-PAK). Features ■ Fast Switching ■ TrenchMOSTM technology. Applications ■ DC-to-DC converters ■ General p

TrenchMOS™ standard level FET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 67mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS??logic level FET

文件：92.88 Kbytes Page：12 Pages

N-Channel Enhancement Mode Power MOSFET

Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：667.81 Kbytes Page：5 Pages