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PH313价格

参考价格：￥1597.4530

型号：PH3135-20M 品牌：MACOM 备注：这里有PH313多少钱，2025年最近7天走势，今日出价，今日竞价，PH313批发/采购报价，PH313行情走势销售排行榜，PH313报价。

型号	功能描述	生产厂家企业	LOGO
PH313	SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR 文件：36.14 Kbytes Page：2 Pages	NEC 瑞萨	NEC
PH313	SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR	RENESAS 瑞萨	RENESAS
PH3134-10M	Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MACOM	MACOM
PH3134-10M	Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-11S	Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-11S	Radar Pulsed Power Transistor, 11 W, lms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P	MACOM	MACOM
PH3134-20L	Radar Pulsed Power Transistor, 20W, 300us Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P	MACOM	MACOM
PH3134-20L	Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-25M	Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-25M	Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MACOM	MACOM
PH3134-30S	Radar Pulsed Power Transistor, 3OW, lms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P	MACOM	MACOM
PH3134-30S	Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-55L	Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-55L	Radar Pulsed Power Transistor, SW, 300ms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometty • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Pa	MACOM	MACOM
PH3134-65M	Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • HermeticMetaVCeramic Pac	MACOM	MACOM
PH3134-65M	Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-9L	Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-9L	Radar Pulsed Power Transistor, 9W, 300us Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package	MACOM	MACOM
PH3135-20M	Radar Pulsed Power Transistor, 20W,100ms Pulse,10 Duty 3.1-3.5 GHz Features • NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic	MACOM	MACOM
PH3135-20M	Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3135-30M	Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3135-30M	Radar Pulsed Power Transistor, 3OW, IOOms Pulse, 10 Duty 3.1 - 3.5 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Pa	MACOM	MACOM
PH3135-5M	Radar Pulsed Power Transistor, 5W, looms Pulse, 10 Duty 3.1 - 3.5 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic‘MetaVCeramic Pa	MACOM	MACOM
PH3135-5M	Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3135-65M	Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3135-65M	Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 us Pulse, 10 Duty Features ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Package	MACOM	MACOM
PH3135-90S	Radar Pulsed Power Transistor, 90W,2ms Pulse,10Duty 3.1-3.5GHz Features • NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic	MACOM	MACOM
PH3135-90S	Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami	MA-COM	MA-COM
PH3134-10M_17	Radar Pulsed Power Transistor 文件：646.7 Kbytes Page：4 Pages	MA-COM	MA-COM
PH3134-11S	Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1μs Pulse, 10% Duty	MACOM	MACOM
PH3134-20L	Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty 文件：107.69 Kbytes Page：3 Pages	MACOM	MACOM
PH3134-20L_17	Radar Pulsed Power Transistor 文件：107.69 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3134-25M	Bipolar	MACOM	MACOM
PH3134-25M_17	Radar Pulsed Power Transistor 文件：649.69 Kbytes Page：4 Pages	MA-COM	MA-COM
PH3134-30S	包装：托盘描述：RF TRANS NPN 65V 分立半导体产品晶体管 - 双极（BJT）- 射频	ETC 知名厂家	ETC
PH3134-30S	Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty 文件：100.04 Kbytes Page：2 Pages	MACOM	MACOM
PH3134-55L	Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty 文件：100.66 Kbytes Page：2 Pages	MACOM	MACOM
PH3134-55L	包装：托盘描述：RF TRANS NPN 65V 分立半导体产品晶体管 - 双极（BJT）- 射频	ETC 知名厂家	ETC
PH3134-55L_17	Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3134-65M	Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3134-65M_15	Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3134-65M_17	Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3134-75S	Radar Pulsed Power Transistor,75W 1ms Pulse,10 Duty 3.1-3.4GHz 文件：142.94 Kbytes Page：2 Pages	MACOM	MACOM
PH3134-75S	Radar Pulsed Power Transistor 75W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty 文件：99.51 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3135-20M	Radar Pulsed Power Transistor 文件：108.01 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-20M_15	Radar Pulsed Power Transistor 文件：108.01 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-20M_17	Radar Pulsed Power Transistor 文件：650.39 Kbytes Page：4 Pages	MA-COM	MA-COM
PH3135-25S	Radar Pulsed Power Transistor 文件：101.35 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3135-25S	Radar Pulsed Power Transistor,25W,2ms Pulse,10 Duty 3.1-3.5GHz 文件：160.9 Kbytes Page：2 Pages	MACOM	MACOM
PH3135-25S	Radar Pulsed Power Transistor 文件：101.35 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3135-25S	Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2關s Pulse, 10 Duty 文件：101.35 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3135-25S_15	Radar Pulsed Power Transistor 文件：101.35 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3135-5M	Radar Pulsed Power Transistor 文件：107.22 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-5M	Radar Pulsed Power Transistor 文件：107.22 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-5M_15	Radar Pulsed Power Transistor 文件：107.22 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-5M_17	Radar Pulsed Power Transistor 文件：107.22 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-5S	Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 2關s Pulse, 10 Duty 文件：100.72 Kbytes Page：2 Pages	MA-COM	MA-COM
PH3135-5S	Radar Pulsed Power Transistor,5W,2ms Pulse, 10 Duty 3.1-3.5 GHz 文件：158.81 Kbytes Page：2 Pages	MACOM	MACOM
PH3135-65M	Radar Pulsed Power Transistor 文件：107.38 Kbytes Page：3 Pages	MA-COM	MA-COM
PH3135-65M_15	Radar Pulsed Power Transistor 文件：107.38 Kbytes Page：3 Pages	MA-COM	MA-COM

PH313产品属性

类型
描述
型号
PH313
制造商
NEC
制造商全称
NEC
功能描述
SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR

PH313供应商更多...

更新时间：2025-10-15 18:24:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	PH3135-65M	MACOM	24+	VQFN	7850	只做原装正品现货或订货假一赔十!	询价
深圳市毅创腾电子科技有限公司	ph3135-25s	MA/COM	23+	高频管	330	专营高频管模块,全新原装!	询价
深圳市湘达电子科技有限公司	PH3134-65M	MA/COM	22+	NA	5000	只做原装,价格优惠,长期供货。	询价
千层芯半导体(深圳)有限公司	PH3134-55L	MINI	24+	SMD	3600	MINI专营品牌全新原装正品假一赔十	询价
深圳市纳立科技有限公司	PH3135-65M	M/A-COM	三年内		1983	只做原装正品	询价
贸泽芯城（深圳）电子科技有限公司	PH3135-5S	MA/COM	23+	TO-59	122580	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市粤骏腾电子科技有限公司	PH3134-25M	PHI	24+		129	现货供应	询价
深圳市能元时代电子有限公司	PH3135-90S	MACOM	23+	NA	25000	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市近平电子有限公司	PH3135-20M	MA-COM	19+	A/N	1000	进口原装现货	询价
深圳市金华微盛电子有限公司	PH3134-20L	M/A-COM	2019+	SMD	6992	原厂渠道可含税出货	询价

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PH313价格

PH313产品属性

PH313供应商更多...

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PH313规格书下载地址

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DdatasheetPDF页码索引