Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10 Duty 3.1 - 3.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • HermeticMetaVCeramic Pac

Bipolar

·NPN Silicon Microwave Power Transistors\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·Diffused Emitter Ballasting Resistors\n·High Efficiency Inter-Digitized Geometry\n·Broadband Class C Operation\n·Common Base Configuration;

Radar Pulsed Power Transistor

文件：100.66 Kbytes Page：2 Pages

Radar Pulsed Power Transistor

文件：100.66 Kbytes Page：2 Pages

Radar Pulsed Power Transistor

文件：100.66 Kbytes Page：2 Pages

65Watts, 34 Volts, 200us, 10 Radar 3100-3400 MHz

文件：71.17 Kbytes Page：4 Pages