Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 us Pulse, 10 Duty

Features ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Package

Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor

文件：107.38 Kbytes Page：3 Pages

包装：托盘 描述：RF TRANS NPN 65V 分立半导体产品 晶体管 - 双极（BJT）- 射频

Radar Pulsed Power Transistor

文件：107.38 Kbytes Page：3 Pages

Radar Pulsed Power Transistor

文件：107.38 Kbytes Page：3 Pages

Microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an