Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100關s Pulse, 10 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 us Pulse, 10 Duty

Features ■ NPN Silicon Microwave Power Transistor ■ Common Base Configuration ■ Broadband Class C Operation ■ High Efficiency Interdigitated Geometry ■ Gold Metalization System ■ Internal Input and Output Impedance Matching ■ Hermetic Metal/Ceramic Package

Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty

·NPN Silicon Microwave Power Transistors\n·RoHS Compliant\n·Hermetic Metal/Ceramic Package\n·Internal Input and Output Impedance Matching\n·Gold Metallization System\n·High Efficiency Inter-Digitized Geometry\n·Diffused Emitter Ballasting Resistor\n·Broadband Class C Operation\n·Common Base Configur;

包装：托盘 描述：RF TRANS NPN 65V 分立半导体产品 晶体管 - 双极（BJT）- 射频

Radar Pulsed Power Transistor

文件：107.38 Kbytes Page：3 Pages

Radar Pulsed Power Transistor

文件：107.38 Kbytes Page：3 Pages

Radar Pulsed Power Transistor

文件：107.38 Kbytes Page：3 Pages

Microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an