耳机

Force Sensor

DESCRIPTION The FSG Series Force Sensor provides precise, reliable force sensing performance in a compact commercial-grade package. The sensor features a proven sensing technology that utilizes a specialized piezoresistive micro-machined silicon sensing element. The low power, unamplified, non-co

Force Sensors

Plastic mounting bracket for the FSG Series.The FSG Series Force Sensor provides precise, reliable force sensing performance in a compact commercial-grade package. The sensor features a proven sensing technology that utilizes a specialized piezoresistive micro-machined silicon sensing element. The l ·Extremely low deflection (approx. 30 µm typical at Full Scale) helps reduce measurement error\n·Low repeatability error ( 0.2% span) improves overall system accuracy\n·Low linearity error ( 0.5% span) improves system accuracy over the entire force range\n·Low off-center loading errors impro;

FRD/SBD 模块

本公司利用丰富的封装技术生产制造模块产品，并投放到工业和车载市场。现在社会要求有效用电，在这一背景下，本公司致力于为通用逆变器、变频空调、太阳能发电系统及混合动力车提供功率模块产品。

包装：盒 描述：FSG PLASTIC MOUNTING BRACKET 传感器，变送器 配件

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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