SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power sup

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 100°C Operating Junction Temperature • 25 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Ins

SCHOTTKY BARRIER RECTIFIER 25 AMPERES 15 VOLTS

SCHOTTKY BARRIER RECTIFIER 25 AMPERES 15 VOLTS . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

封装/外壳：TO-220-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 15V 25A TO220-2 分立半导体产品 二极管 - 整流器 - 单

15 V，25 A，肖特基整流器

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 100°C Operating Junction Temperature • 25 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Ins

封装/外壳：TO-220-2 包装：散装 描述：DIODE SCHOTTKY 15V 25A TO220-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High