4.0A BRIDGE RECTIFIER

Features • High Case Dielectric Strength of 1500V • Low Forward Voltage Drop, High Current Capability • Surge Overload Rating to 150A Peak • Ideal for Printed Circuit Board Application • Plastic Material - UL Flammability Classification 94V-0 • UL Listed Under Recognized Component Index, Fil

SILICON BRIDGE RECTIFIERS

FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification 94V-0 • UL Recognition File # E228882

SILICON BRIDGE RECTIFIERS

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Multiband GSM Power Amplifier

Description. The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or PCS1900 frequencies. The circuit uses an analo

GSM Dual Band Tx_VCO

Description The PBL 403 07 is a Dual Band Tx_VCO for use in GSM dual band terminals. The resonators for each band are external. The resonator consists of varactor, capacitor and inductor in series from ground to the VCO resonator pin. The inductor, capacitor and varactor determines the oscillati

3.6 V Differential Power Amplifier for DECT Telecommunications system

Description. The PBL 403 09 is a differential two stage silicon MMIC power amplifier intended for use in handheld cordless terminals in the 1900 MHz band. It can deliver more than 27 dBm at 1900 MHz into a balanced 50 Ω load using a single 3.6 V supply. The circuit has a logic input to control tr

3.5 V GSM 900 MHz Power Amplifier

Description. The PBL 40310 is a highly integrated single-ended silicon MMIC power amplifier intended for use in GSM terminals. It delivers 35 dBm at 900 MHz with 55 power added efficiency into a 50 Ω unbalanced load using a single 3.5 V supply. Key features. • 2.7 to 5.0 V single supply operat

GSM Dual Band Tx_VCO

3.6 V Differential Power Amplifier for DECT Telecommunications system

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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