PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V\n• Mean on-state current 400 A\n• Surge current 5 kA

Standard Size Pushbuttons

General Specifications Electrical Capacity (Resistive Load) Power Level (silver): 3A @ 125V AC or 3A @ 250V AC or 3A @ 30V DC Logic Level (gold): 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V) Note: Find additional explanation of operating range in Supplement s

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

包装：盒 描述：CAP PUSHBUTTON RECTANGULAR WHITE 开关 配件 - 帽盖

开关配件/盖帽

包装：盒 描述：CAP PUSHBUTTON RECTANGULAR RED 开关 配件 - 帽盖

开关配件/盖帽

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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