丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

丝印代码：P3；RF Manual 16th edition

NPN 17 GHz宽频带晶体管

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT） 描述：RF TRANS NPN 4.5V 17GHZ CMPAK-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN 17 GHz wideband transistor

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NPN 17 GHz wideband transistor

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NPN 17 GHz wideband transistor

文件：92.56 Kbytes Page：12 Pages

PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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