DESCRIPTION

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.

FEATURES

• Low current

• Very high power gain

• Low noise figure

• High transition frequency

• Very low feedback capacitance.

APPLICATIONS

• Pager front ends

• RF front end

• Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors.