| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P55NE06 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 |   | |
N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VBSEMI/台湾微碧 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
1885 |
||||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
S |
22+ |
TO220 |
6000 |
十年配单,只做原装 |
|||
VBsemi |
24+ |
TO220 |
8000 |
新到现货，只做全新原装正品 |
|||
ST/意法 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
门市 |
2018 |
91 |
14 |
||||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
P55NE06芯片相关品牌
P55NE06规格书下载地址
P55NE06参数引脚图相关
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- pt100
- pled
- pl2303
- pl-21
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- PIN二极管
- pic微控制器
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- PCB材料
- PCBA
- pc817
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- PC/104
- p800
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- P562015
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- P560-010-DLI
- P560010A
- P560-010
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- P560-006-DLI
- P560006DLI
- P560-006-A
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- P560-006
- P560006
- P560-003
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- P560-001
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- P556-006
- P556006
- P556-003
- P556003
- P553-MT
- P553
- P5515BV
- P5515BTF
- P5515BK
- P5515BD
- P5515-140M-EP
- P5506NV
- P5500
- P54B4SN
- P5400
- P53DM16
- P5342
- P5341
- P5300
- P52U98
- P52U157
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P55NE06数据表相关新闻
P4SMA10CA
P4SMA10CA
2023-5-15P5DF081HN/T1AR1070
P5DF081HN/T1AR1070
2022-11-18P620原装现货
P620原装正品
2021-8-7P6KE 单向双向 TVS瞬态抑制二极管
P6KE 单向双向 TVS瞬态抑制二极管
2021-6-21P540A，P540A01，P540A02，P540A04，P540C0101，P540C0102，
P540A，P540A01，P540A02，P540A04，P540C0101，P540C0102，
2020-3-2P5504EDG原装现货
瀚佳科技(深圳)有限公司 专业为工厂一站式全套配单服务 0755-23140719/15323480719(微信同号）李s
2019-2-19
DdatasheetPDF页码索引
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