位置：首页 > IC中文资料第102页 > STB55NE06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STB55NE06 | N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 |   | |
STB55NE06 | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable ma | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.31569 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
STB55NE06产品属性
- 类型
描述
- 型号
STB55NE06
- 功能描述
MOSFET N-Ch 60 Volt 55 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicro |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
ADI |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
ST |
NEW |
TO-263 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
25+ |
TO |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST/意法 |
25+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
|||
ST |
06+ |
TO-263 |
8000 |
原装库存 |
|||
ST/意法 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
24+ |
N/A |
1520 |
|||||
ST |
23+24 |
SOT263 |
17392 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
STB55NE06规格书下载地址
STB55NE06参数引脚图相关
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- STB6039
- STB6036
- STB6033
- STB6030
- STB6027
- STB6024
- STB6022
- STB6020
- STB6018
- STB6016
- STB6015
- STB6013
- STB6012
- STB6011
- STB6010
- STB6000
- STB5NA50
- STB5N62K3
- STB5N52K3
- STB5BK50Z-1
- STB57N65M5
- STB5701
- STB5610TR
- STB5610
- STB5600TR
- STB5600
- STB560
- STB55NF06T4
- STB55NF06LT4
- STB55NF06L-1
- STB55NF06L
- STB55NF06FP
- STB55NF06-1
- STB55NF06_06
- STB55NF06
- STB55NF03LT4
- STB55NF03L-1
- STB5528TWB
- STB-520S
- STB520N
- STB-520M
- STB5200
- STB5150
- STB5105-REF/C
- STB5105-MB/NS
- STB5100
- STB50NH02LT4
- STB50NH02L
- STB50NF25
- STB50NE10T4
- STB50NE10LT4
- STB50NE10L
- STB50NE10_06
- STB50NE10
- STB50N25M5
- STB-50A
- STB5083
- STB-50
- STB-5.08-3
- STB4NK60ZT4
- STB4NK60Z-1
- STB458D
- STB4410
- STB4395
- STB434S
- STB432S
- STB416D
- STB3015
- STB2060
- STB205L
- STB2045
- STB1560
- STB1306
- STB1277
- STB1188
- STB1132
- STB1106
STB55NE06数据表相关新闻
STB35N65DM2
STB35N65DM2芯片是一种功能强大、性能稳定的高性能功率MOSFET，具有广泛的应用前景。它的高效率、可靠性和多种保护功能使得它成为各种功率应用中的理想选择，将为工业、汽车和消费电子等领域的发展提供强大的支持。
2023-11-24STBR3012G2Y-T
https://hfx03.114ic.com
2022-12-14STB13NM60N
热卖-原装正品现货
2022-8-11STBC08PMR
STBC08PMR 电池充电管理芯片 ST 封装DFN6
2022-8-2STC-1000V-0.15UF-2V 脚距27.5
STC-1000V-0.15UF-2V 脚距27.5电容现货 元器件配单
2022-1-10STB20N90K5 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STB20N90K5 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：1000 封装：TO-263-3
2021-9-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
