型号 功能描述 生产厂家 企业 LOGO 操作
P12N

LOW-POWER, LOW-NOISE, REGULATED HIGH-VOLTAGE SUPPLY

文件:509.81 Kbytes Page:5 Pages

XPPOWER

P12N

封装/外壳:7-DIP 模块 包装:盒 描述:DC DC CONVERTER -1200V 电源 - 板安装 直流转换器

XPPOWER

P12N

封装/外壳:7-DIP 模块 包装:盒 描述:DC DC CONVERTER -1200V 电源 - 板安装 直流转换器

XPPOWER

P12N

High Voltage DC-DC

ETC

知名厂家

24A, 600V, UFS Series N-Channel IGBTs

Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l

HARRIS

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH?줞OSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such serie

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10581 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Silicon 650V N-Channel MOS

文件:947.37 Kbytes Page:6 Pages

NIUHANG

纽航电子

N-Channel 650 V (D-S) MOSFET

文件:1.03392 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03296 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH™MOSFET

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件:466.66 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件:1.02252 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件:588.5 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P12N产品属性

  • 类型

    描述

  • 型号

    P12N

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

更新时间:2025-12-29 16:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
TO-220
1
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
26+
TO-220
60000
只有原装 可配单
ST
24+
TO-220
8150
绝对原装现货,价格低,欢迎询购!
ST
25+
TOP220
4500
全新原装、诚信经营、公司现货销售!
XP Power
24+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
ST
23+
TO-210
16900
正规渠道,只有原装!
ST/意法
22+
TO-200F
7
绝对公司原装现货假一赔十
ST/意法
2406+
TO220
650
诚信经营!进口原装!量大价优!
ST
24+
TO-220F
18000
原装正品 有挂有货 假一赔十
SST
原厂封装
9800
原装进口公司现货假一赔百

P12N芯片相关品牌

P12N数据表相关新闻