型号 功能描述 生产厂家 企业 LOGO 操作
P12N

LOW-POWER, LOW-NOISE, REGULATED HIGH-VOLTAGE SUPPLY

文件:509.81 Kbytes Page:5 Pages

XPPOWER

P12N

封装/外壳:7-DIP 模块 包装:盒 描述:DC DC CONVERTER -1200V 电源 - 板安装 直流转换器

XPP

P12N

封装/外壳:7-DIP 模块 包装:盒 描述:DC DC CONVERTER -1200V 电源 - 板安装 直流转换器

XPP

P12N

High Voltage DC-DC

XPP

24A, 600V, UFS Series N-Channel IGBTs

Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much l

HARRIS

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH?줞OSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such serie

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件:1.10581 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Silicon 650V N-Channel MOS

文件:947.37 Kbytes Page:6 Pages

NIUHANG

纽航电子

N-Channel 650 V (D-S) MOSFET

文件:1.03392 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03296 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH™MOSFET

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

N-channel 500V - 0.32廓 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh??Power MOSFET (with fast diode)

文件:466.66 Kbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

N-channel 550V @ tjmax - 0.30廓 - 12A TO-220/FP/D2/I2PAK MDmesh??Power MOSFET

文件:544.65 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件:1.02252 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 500 V, 0.29 廓, 11 A MDmesh??II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

文件:588.5 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.03295 Mbytes Page:8 Pages

VBSEMI

微碧半导体

P12N产品属性

  • 类型

    描述

  • 型号

    P12N

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

更新时间:2025-10-16 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TO-220
23+
NA
15659
振宏微专业只做正品,假一罚百!
ST
25+
TOP220
4500
全新原装、诚信经营、公司现货销售!
ST
23+
TO-210
16900
正规渠道,只有原装!
ST
24+
TO-220
8150
绝对原装现货,价格低,欢迎询购!
ST
11+
TO220F
2000
原装现货价格有优势量大可以发货
ST/意法
23+
TO220
56688
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST/意法
22+
TO-200F
7
绝对公司原装现货假一赔十
ST/意法
2406+
TO220
650
诚信经营!进口原装!量大价优!
ST
24+
TO-220F
18000
原装正品 有挂有货 假一赔十
FAIRCHILD
19+
TO-220
24520

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