Dual/Quad, Low Power, High Speed JFET Operational Amplifiers

GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew rate is typically 9 V/µs with a supply current of less than 250 µA per amplifier. These unity-gain stable amplifiers have a typical gain bandwidth of 4 M

Dual/Quad Low Power, High Speed JFET Operational Amplifiers

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Dual/Quad, Low Power, High Speed JFET Operational Amplifiers

GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew rate is typically 9 V/µs with a supply current of less than 250 µA per amplifier. These unity-gain stable amplifiers have a typical gain bandwidth of 4 M

Dual/Quad, Low Power, High Speed JFET Operational Amplifiers

GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew rate is typically 9 V/µs with a supply current of less than 250 µA per amplifier. These unity-gain stable amplifiers have a typical gain bandwidth of 4 M

Dual/Quad Low Power, High Speed JFET Operational Amplifiers

文件：340.58 Kbytes Page：16 Pages

Dual/Quad Low Power, High Speed JFET Operational Amplifiers

文件：340.58 Kbytes Page：16 Pages

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

Round.Top View Type

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