LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

封装/外壳：NI-200S 包装：卷带（TR） 描述：FET RF 65V 2GHZ NI-200S 分立半导体产品 晶体管 - FET，MOSFET - 射频

2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

2000 MHz, 10 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

封装/外壳：NI-200Z 包装：托盘 描述：FET RF 65V 2GHZ NI-200Z 分立半导体产品 晶体管 - FET，MOSFET - 射频

2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

HALL-EFFECT SMART FAN MOTOR CONTROLLER

General Description AH282 is a monolithic fan motor controller with Hall sensor’s capability. It contains two complementary open-collector transistors as motor coil drivers, automatic lock current shutdown, and recovery protections. Additional, frequency generator (FG) output is for speed detecti

HALL-EFFECT SMART FAN MOTOR CONTROLLER

General Description AH282 is a monolithic fan motor controller with Hall sensor’s capability. It contains two complementary open-collector transistors as motor coil drivers, automatic lock current shutdown, and recovery protections. Additional, frequency generator (FG) output is for speed detecti

Fuseholders - For MicroTM Fuse Plug-In Fuses

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TO-8 CASCADABLE AMPLIFIERS

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