LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

2000 MHz, 10 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

封装/外壳：NI-200Z 包装：托盘 描述：FET RF 65V 2GHZ NI-200Z 分立半导体产品 晶体管 - FET，MOSFET - 射频

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

HALL-EFFECT SMART FAN MOTOR CONTROLLER

General Description AH282 is a monolithic fan motor controller with Hall sensor’s capability. It contains two complementary open-collector transistors as motor coil drivers, automatic lock current shutdown, and recovery protections. Additional, frequency generator (FG) output is for speed detecti

HALL-EFFECT SMART FAN MOTOR CONTROLLER

General Description AH282 is a monolithic fan motor controller with Hall sensor’s capability. It contains two complementary open-collector transistors as motor coil drivers, automatic lock current shutdown, and recovery protections. Additional, frequency generator (FG) output is for speed detecti

Fuseholders - For MicroTM Fuse Plug-In Fuses

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TO-8 CASCADABLE AMPLIFIERS

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