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型号 功能描述 生产厂家 企业 LOGO 操作
NTE282

Silicon NPN Transistor Final RF Power Amp, Switch

Applications: • HF Power Amplifiers, Switchings • 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

NTE

NTE282

Silicon NPN Transistor Final RF Power Amp, Switch

Applications:\n• HF Power Amplifiers, Switchings\n• 27MHz, 4W, AM, Citizens Band Transmitter Output Stage

NTE

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MOTOROLA

摩托罗拉

Round.Top View Type

文件:32.36 Kbytes Page:1 Pages

PANASONIC

松下

NTE282产品属性

  • 类型

    描述

  • 型号

    NTE282

  • 制造商

    NTE

  • 制造商全称

    NTE Electronics

  • 功能描述

    Silicon NPN Transistor Final RF Power Amp, Switch

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