Power MOSFET 30 V, 51 A, Single N?묬hannel, SO?? FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

Power MOSFET30 V, 51 A, Single N−Channel, SO−8 FL

Power MOSFET 30 V, 51 A, Single N?묬hannel, SO?? FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

Power MOSFET 30 V, 51 A, Single N?묬hannel, SO?? FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET TRENCH 30V NCH