MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 m, 55 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

Power MOSFET 30V, 55A, 4.8 mΩ, Single N-Channel, SO8-FL, Logic Level.

MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 m, 55 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 m, 55 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • NVMFS4C308NWF − Wettable Flanks Option for Enhanced Optical Inspection • These Devices are Pb−Free, H

包装：卷带（TR） 描述：MOSFET N-CH 30V 88A DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个