Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

Single N−Channel Logic Level Power MOSFET 30 V, 241 A, 1.15 mΩ

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

Power MOSFET 30 V, 1.15 m, 241 A, Single N?묬hannel Logic Level, SO??FL

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, H

MOSFET ??Single, N-Channel, Logic Level, SO-8 FL 30 V, 1.15 m, 230 A

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