MOSFET ??Power, Dual N-Channel 40 V, 11.5 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C470NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

双 N 沟道，功率 MOSFET，40V，36A，11.5mΩ

MOSFET ??Power, Dual N-Channel 40 V, 11.5 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C470NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Dual N-Channel 40 V, 11.5 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C470NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Dual N-Channel

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MOSFET ??Power, Dual, N-Channel 40 V, 11.5 m, 36 A

文件：229.99 Kbytes Page：7 Pages

TNR C SERIES

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