MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

双 N 沟道功率 MOSFET 40 V，46 A，8.1 mΩ

MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

双 N 沟道，功率 MOSFET，40V，52A，7.4mΩ

Power MOSFET 40 V, 8.1 m, 49 A, Dual N?묬hannel

文件：218.79 Kbytes Page：7 Pages

MOSFET ??Power, Dual, N-Channel 40 V, 7.4 m, 52 A

文件：231.12 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 40 V, 7.3 m, 51 A

文件：184.69 Kbytes Page：6 Pages

MOSFET ??Power, Single, N-Channel 40 V, 7.3 m, 51 A

文件：184.69 Kbytes Page：6 Pages