型号 功能描述 生产厂家 企业 LOGO 操作
NVMFD024N06C

MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

ONSEMI

安森美半导体

NVMFD024N06C

Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mΩ, 24 A

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

ONSEMI

安森美半导体

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin

Infineon

英飞凌

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.4m廓

General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A • F

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-ch Trench MOS FET

General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU

KEC

KEC(Korea Electronics)

MOSFET – Power, Single N-Channel, 8FL

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

ONSEMI

安森美半导体

更新时间:2025-9-26 18:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2032+
DFN-8
60
一级代理,专注军工、汽车、医疗、工业、新能源、电力
三年内
1983
只做原装正品
ON/安森美
22+
N/A
10280
现货,原厂原装假一罚十!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
21+
NA
12820
只做原装,质量保证
ON
23+
DFN-8
60
正规渠道,只有原装!
onsemi(安森美)
24+
DFN-8(5x6)
8850
支持大陆交货,美金交易。原装现货库存。
ON
24+
DFN-8
9000
只做原装正品 有挂有货 假一赔十
onsemi
25+
8-PowerTDFN
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ONSEMI/安森美
两年内
N/A
3000
原装现货,实单价格可谈

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