位置:首页 > IC中文资料 > NVMFD024N06C
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NVMFD024N06C | MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal | ONSEMI 安森美半导体 | ||
MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal | ONSEMI 安森美半导体 | |||
OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified accordin | Infineon 英飞凌 | |||
N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.4m廓 General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A • F | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATU | KECKEC CORPORATION KEC株式会社 | |||
MOSFET – Power, Single N-Channel, 8FL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum | ONSEMI 安森美半导体 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ONSEMI/安森美 |
2511 |
DFN85x6 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ONSEMI/安森美 |
两年内 |
N/A |
3000 |
原装现货,实单价格可谈 |
|||
onsemi(安森美) |
24+ |
DFN-8(5x6) |
8850 |
支持大陆交货,美金交易。原装现货库存。 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
2447 |
8-PowerTDFN |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ON/安森美 |
2022+ |
DFN56E-8-EP |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
ON |
24+ |
DFN-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON |
23+ |
DFN-8 |
60 |
正规渠道,只有原装! |
NVMFD024N06C规格书下载地址
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2020-11-18
DdatasheetPDF页码索引
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