MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A

丝印代码：20DN6C；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

丝印代码：T100；4V Drive Nch MOS FET

Features 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. Applications Switching

丝印代码：LS；2.5V Drive Nch MOS FET

Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive). Applications Switching

丝印代码：PZ；4V Drive Nch MOS FET

■ MOSFETs ● Small Signal MOSFET Series ● Middle Power MOSFET Series ● Power MOSFET Series ■ Selector Guide for Automotive MOSFETs (AEC-Q101) ■ Bipolar Transistors (Surface mount type) ■ Transistor Array ■ Complex Bipolar Transistors ■ Digital Transistors ■ Complex Digital Transis

丝印代码：T100；4V Drive Nch MOSFET

文件：228.01 Kbytes Page：5 Pages

Nch 60V 2A Small Signal MOSFET

文件：2.47908 Mbytes Page：14 Pages