位置:首页 > IC中文资料第6469页 > NTP75N06D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTP75N06D | Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 | ||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 | |||
TMOS POWER FET 75 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components with higher power and lower RDS(on) capabilities. This advance | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 mΩ Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • P | ONSEMI 安森美半导体 |
NTP75N06D产品属性
- 类型
描述
- 型号
NTP75N06D
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装,价格优势,欢迎洽谈! |
|||
VB |
25+ |
TO220 |
10000 |
原装现货假一罚十 |
|||
ON(安森美) |
25+ |
标准封装 |
20000 |
原装,请咨询 |
|||
26+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
|||
ON(安森美) |
25+ |
NA |
28000 |
原装正品,可来电咨询 |
|||
ON(安森美) |
26+ |
NA |
10000 |
全新、原装现货 |
|||
onsemi |
25+ |
N/A |
7734 |
样件支持,可原厂排单订货! |
|||
ON(安森美) |
26+ |
NA |
8000 |
原装现货 极速发货 一站式原装元器件BOM配单 |
|||
三年内 |
1983 |
只做原装正品 |
NTP75N06D芯片相关品牌
NTP75N06D规格书下载地址
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DdatasheetPDF页码索引
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