TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N−Channel Power MOSFET

N?묬hannel Power MOSFET

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N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

Fast Switching Speed

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N-Channel 60-V (D-S) MOSFET

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