互补，ChipFET™，功率 MOSFET，20V

Power MOSFET Complementary, 20 V, +3.9 A/-4.4 A ChipFET™ • Complementary N-Channel and P-Channel MOSFET\n• Small Size, 40% Smaller then TSOP-6 Package\n• Leadless SMD Package Provides Great Thermal Charcteristics\n• Trench P-Channel for Low On Resistance\n• Low Gate Charge N-Channel for Test Switching;

Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

文件：153.61 Kbytes Page：8 Pages

Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

文件：153.61 Kbytes Page：8 Pages

Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

文件：153.61 Kbytes Page：8 Pages

Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

文件：153.61 Kbytes Page：8 Pages

Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

文件：153.61 Kbytes Page：8 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Photon Coupled Interrupter Module

Description: The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor on a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. T

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)