Description:

The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon

phototransistor on a plastic housing. The package system is designed to optimize the mechanical

resolution, coupling efficiency, ambient light rejection, cost, and reliability. The gap in the housing pro

vides a means of interrupting the signal with an opaque material, switching the output from an “ON”

into an “OFF” state.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Total Device

Operating Temperature Range, TJ . . . . . . . . . . . . . . . . .. –55° to +100°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . .. –55° to +100°C

Lead Temperature (During Soldering, 5sec max), TL . . . . . . . .. +260°C

Infrared Emitting Diode

Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 100mW

Derate Above 25°C 1.33mW/ . . . . . . . . . . . . . . . . . . . .. . . . . . . . °C

Forward Current, IF

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA

Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) . . . . . . . . . . . .. . . .3A

Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . 6V

Phototransistor

Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 150mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . 100mA

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . 55V

Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 6V