Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV

Description: TheNTE65issiliconNPNtransistordesignedprimarilyforuseinhigh–gain,low–noise,small–signalamplifierandalsousedinapplicationsrequiringfastswitchingtimes. Features: ●HighCurrent–GainBandwidthProduct ●LowNoiseFigure ●HighPowerGain

Integrated Circuit NMOS, 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC

Description: TheNTE6507integratedcircuitisan8bitmicroprocessorina28–LeadDIPtypepackagewhichprovidesaselectionofaddressablememoryrange,interruptinputoptions,andon–chipclockoscillatorsanddrivers.ThisdeviceisbuscompatiblewiththeMC6800productofferingandisai

Integrated Circuit CMOS, 1K Static RAM (SRAM)

Description: TheNTE6508isa1024x1fullystaticCMOSRAMina16–LeadDIPtypepackagefabricatedusingself–alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoacheivehighperformanceandlowpoweroperation.Onchiplatchesareprovidedforaddressallowi

Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

Description: TheNTE65101isaCMOS1024–bitdeviceorganizedin256wordsby4bitsina22–LeadDIPtypepackage.Thisdeviceoffersultralowpowerandfullystaticoperationwithasingle5Vsupply.Separatedatainputsanddataoutputspermitmaximumflexibilityinbus–orientedsystems.Data