Integrated Circuit CMOS, 1K Static RAM (SRAM)

Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowi

Integrated Circuit CMOS, 1K Static RAM (SRAM)

1024 x 1 CMOS RAM

Description The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. Features • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max • L

DIODE ARRAY CIRCUITS

DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

8 AMP ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION

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CYLINDER MOTOR CONTROL DRIVER IC FOR VTR MOVIE

文件：649.58 Kbytes Page：18 Pages

3-band mixer/oscillator and PLL for terrestrial tuners

文件：274.44 Kbytes Page：42 Pages