Integrated Circuit CMOS, 1K Static RAM (SRAM)

Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power operation. On chip latches are provided for address allowi

Integrated Circuit CMOS, 1K Static RAM (SRAM)

Security & Sound, #22-10c BC, Shielded, CMP

Product Description Security & Sound Cable, Plenum-CMP, 10-22 AWG stranded bare copper conductors with Flamarrest® insulation, Beldfoil® shield and Flamarrest® jacket with ripcord

Security & Sound, #22-10c, BC, CMP

Product Description Security & Sound Cable, Plenum-CMP 10-22 AWG stranded bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord

30V N-Channel AlphaMOS

General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS 30V ID (at VGS=10V)

Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options

文件：65.129 Kbytes Page：2 Pages

500kHz 21V 3A SYNCHRONOUS DC/DC BUCK CONVERTER

文件：999.84 Kbytes Page：14 Pages