Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz

Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts Minimum Gain = 7.6dB Efficiency = 60 • Characterized from 125 to 175MHz • I

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages

HIGH SPEED DIFFRENTIAL COMPARATOR

文件：186.85 Kbytes Page：5 Pages