MBR360价格
参考价格:¥0.7067
型号:MBR360G 品牌:ON 备注:这里有MBR360多少钱,2026年最近7天走势,今日出价,今日竞价,MBR360批发/采购报价,MBR360行情走势销售排行榜,MBR360报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
丝印代码:MBR360;SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
MBR360 | 3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications | ZSELEC 淄博圣诺 | ||
MBR360 | Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | ||
MBR360 | Planar Schottky Diode The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diodes. | UTC 友顺 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode | UTC 友顺 | ||
MBR360 | Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIERS FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications | CTC 沛伦 | ||
MBR360 | 3A SCHOTTKY RECTIFIER 3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | ||
MBR360 | Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | MOTOROLA 摩托罗拉 | ||
MBR360 | SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade | IRF | ||
MBR360 | Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling | ONSEMI 安森美半导体 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte | MOTOROLA 摩托罗拉 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen | PANJIT 強茂 | ||
MBR360 | 3.0A 60V Schottky diode 文件:376.203 Kbytes Page:2 Pages | |||
MBR360 | 3.0A 60V Schottky diode 文件:376.203 Kbytes Page:2 Pages | |||
MBR360 | Schottky Barrier Rectifier Diodes 文件:102.46 Kbytes Page:2 Pages | DIOTEC 德欧泰克 | ||
MBR360 | SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | ||
MBR360 | Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR360 | Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
MBR360 | 功率肖特基二极管(IF ≧ 1A) | PANJIT 強茂 | ||
MBR360 | Schottky Diodes | DIOTEC 德欧泰克 | ||
MBR360 | 封装/外壳:DO-201AA,DO-27,轴向 包装:散装 描述:DIODE SCHOTTKY 60V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V 0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protecti | AITSEMI 创瑞科技 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode | UTC 友顺 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | |||
Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | MOTOROLA 摩托罗拉 | |||
SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade | IRF | |||
Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded | VISHAYVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY BARRIER RECTIFIERS 文件:98.57 Kbytes Page:2 Pages | CTC 沛伦 | |||
Surface Mount Schottky Barrier Rectifier 文件:477.48 Kbytes Page:3 Pages | YFWDIODE 佑风微 | |||
Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:DO-201AA,DO-27,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
SWITCHMODE??Power Rectifirers DPAK Surface Mount Package SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel | MOTOROLA 摩托罗拉 | |||
HIGH SPEED DIFFRENTIAL COMPARATOR 文件:186.85 Kbytes Page:5 Pages | NJRC 日本无线 | |||
HIGH SPEED DIFFRENTIAL COMPARATOR 文件:186.85 Kbytes Page:5 Pages | NJRC 日本无线 | |||
HIGH SPEED DIFFRENTIAL COMPARATOR 文件:186.85 Kbytes Page:5 Pages | NJRC 日本无线 |
MBR360产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Configuration:
Single
- VRRM Min (V):
60
- VF Max (V):
0.74
- IRM Max (µA):
600
- IO(rec) Max (A):
3
- IFSM Max (A):
80
- Package Type:
Axial Lead-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
1519 |
R6 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
24+/25+ |
24500 |
原装正品现货库存价优 |
||||
ON/安森美 |
21+ |
DO-201AD |
8080 |
只做原装,质量保证 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
25+ |
DO-201AD |
30000 |
原装正品公司现货,假一赔十! |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON进口 |
25+23+ |
DO-201 |
55341 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON |
25+ |
DO201AD |
27544 |
原厂原装,价格优势 |
|||
ADI/亚德诺 |
23+ |
SOT23-8 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ON/安森美 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
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