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MBR360价格
参考价格:¥0.7067
型号:MBR360G 品牌:ON 备注:这里有MBR360多少钱,2025年最近7天走势,今日出价,今日竞价,MBR360批发/采购报价,MBR360行情走势销售排行榜,MBR360报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBR360 | Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | Motorola 摩托罗拉 | ||
MBR360 | SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade | IRF | ||
MBR360 | Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling | ONSEMI 安森美半导体 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverte | Motorola 摩托罗拉 | ||
MBR360 | Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volt CURRENT 3 Ampere FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 80A Peak • For Use in Low Voltage, High Frequen | PANJIT 強茂 | ||
MBR360 | SCHOTTKY BARRIER RECTIFIERS FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency inverters,free wheeling,and polarity protection applications | CTC ctconline | ||
MBR360 | SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode | UTC 友顺 | ||
MBR360 | 3A SCHOTTKY RECTIFIER 3A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | ||
MBR360 | 3.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications | ZSELEC 淄博圣诺电子 | ||
MBR360 | Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | ||
MBR360 | 3.0A 60V Schottky diode 文件:376.203 Kbytes Page:2 Pages | |||
MBR360 | 3.0A 60V Schottky diode 文件:376.203 Kbytes Page:2 Pages | |||
MBR360 | SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | ||
MBR360 | Schottky Barrier Rectifier Diodes 文件:102.46 Kbytes Page:2 Pages | Diotec 德欧泰克 | ||
MBR360 | Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | ||
MBR360 | Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
MBR360 | 封装/外壳:DO-201AA,DO-27,轴向 包装:散装 描述:DIODE SCHOTTKY 60V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 3.0A DESCRIPTION The MBR 3 20 F ~MBR 3 200 F are available in SOD 123FL Pa ckage FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V 0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protecti | AITSEMI 创瑞科技 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc. The UTC MBR360 is suitable for free wheeling diodes, high frequency inverters, low voltage and polarity protection diode | UTC 友顺 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free whee | ONSEMI 安森美半导体 | |||
Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | Motorola 摩托罗拉 | |||
SCHOTTKY RECTIFIER Description/ Features The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leade | IRF | |||
Schottky Rectifier, 3 A DESCRIPTION The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY BARRIER RECTIFIERS 文件:98.57 Kbytes Page:2 Pages | CTC ctconline | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
Surface Mount Schottky Barrier Rectifier 文件:477.48 Kbytes Page:3 Pages | YFWDIODE 佑风微电子 | |||
Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:DO-201AA,DO-27,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 3A DO201AD 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers 文件:59.75 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Schottky Rectifier, 3 A 文件:120.33 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
SCHOTTKY BARRIER DIODE 文件:368.93 Kbytes Page:9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | |||
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MBR360产品属性
- 类型
描述
- 型号
MBR360
- 功能描述
肖特基二极管与整流器 3A 60V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
9999 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON(安森美) |
24+ |
标准封装 |
9398 |
全新原装正品/价格优惠/质量保障 |
|||
ON/安森美 |
2023+ |
DO-201 |
8635 |
全新原装正品,优势价格 |
|||
ON |
1950+ |
DO214 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
ON/安森美 |
25+ |
DO-201AD |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON |
25+23+ |
DO201AD |
18593 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
21+ |
DO-201AD |
8080 |
只做原装,质量保证 |
|||
ONSEMI/安森美 |
24+ |
DO-201AD |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
MBR360规格书下载地址
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MBR360数据表相关新闻
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