Silicon Complementary Transistors AF Power Amplifier, High Current Switch

AF Power Amplifier, High Current Switch. The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de signed for AF power amplifier and high current switching applications.

Complementary Transistors

Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz

Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts Minimum Gain = 7.6dB Efficiency = 60 • Characterized from 125 to 175MHz • I

Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz

Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristics: Output Power = 2.0 Watts Minimum Gain = 8.0dB

Silicon NPN Transistor RF Power

Description: The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960MHz range. Features: ● Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts ● Minimum Gain = 9.0dB ● E

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

Silicon NPN Transistor RF Power Output PO = 15W @ 512MHz

Description: The NTE365 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristic: Output Power = 15 Watts Minimum Gain = 7.8dB E

Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz

Description: The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristic: Output Power = 25 Watts Minimum Gain = 6.2dB E

Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz

Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum G

Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz

Description: The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: ● Specified 12.5 Volt, 470MHz Characteristic: Output Power = 60 Watts Minimum Gain = 4.4dB E

Silicon NPN Transistor TV Vertical Deflection, Switch

Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: ● High Voltage: VCBO = 800V ● Gain Specified to 200mA

RF transistors

RF transistors