Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz)

Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: ● High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) ● Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 1

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

Flat screw terminals Medium-duty version with grooved flat terminals, 6-pole

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Fuseholders - For 3AG Fuses

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DUAL MONOSTABLE MULTIVIBRATOR

文件：384.1 Kbytes Page：3 Pages

DUAL MONOSTABLE MULTIVIBRATOR

文件：384.1 Kbytes Page：3 Pages