位置:首页 > IC中文资料 > NTE309

型号 功能描述 生产厂家 企业 LOGO 操作
NTE309

Integrted Circuit Voltage Regulator

Description: The NTE309K is a complete 5V regulator fabricated on a single silicon chip. It is designed for local regulation on digital logic cards, eliminating the distribution problems associated with single–point regulation. With the TO3 power package, the available output current is g

NTE

Optoisolator Schmitt Trigger Output

Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is designed for applications requiring electrical isolation, fast response time, noise i

NTE

Optoisolator SCR Output

Description: The NTE3091 is a gallium arsenide, infrared emitting diode coupled with a light activated silicon controlled rectifier in a 6–Lead DIP type ppackage.

NTE

Optoisolator SCR Output

Description:\nThe NTE3091 is a gallium arsenide, infrared emitting diode coupled with a light activated silicon\ncontrolled rectifier in a 6–Lead DIP type ppackage.

NTE

Optoisolator Open Collector, NPN Transistor Output

Features: High Isolation Voltage High Speed: tPHL= 0.2µs, tPLH= 1.0µs (Typ) Current Transfer Ratio: 19 Min Applications: Digital Logic Isolation Line Receiver Feedback Control Power Supply Control Switching Power Supply Transistor Invertor

NTE

Optoisolator NPN Split Darlington Output

Description: The NTE3093 coupler uses a light emitting diode (LED) and an integrated high gain photon detector to provide 3000V DC electrical insulation, 500V/µs common mode transient immunity and extremely high current transfer ratio between inut and output. Separate pins for the photodiode and

NTE

Optoisolator Dual, High Speed, Open Collector NAND Gate

Description: The NTE3094 consists of a pair of inverting optically coupled gates each with a GaAsP emitting diode and a unique integrated detector. The photons are collected in the detector by a photodiode and then amplified by a high gain linear amplifier that drives a Schottky clamped open coll

NTE

Optoisolator Dual, High Speed, Open Collector NAND Gate

Description:\nThe NTE3094 consists of a pair of inverting optically coupled gates each with a GaAsP emitting diode and a unique integrated detector. The photons are collected in the detector by a photodiode and then amplified by a high gain linear amplifier that drives a Schottky clamped open collec

NTE

Optoisolator

Description:\nThe NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to a h

NTE

Optoisolator

Description: The NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to

NTE

Optoisolator Low LED Drive NPN Transistor Output

Description: The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as inter

NTE

Optoisolator Zero Crossing TRIAC Driver

Description: The NTE3097 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral TRIAC Driver. This device is designed for use with a TRIAC in the i

NTE

Optoisolator Phototransistor w/NPN Transistor Output

Description: The NTE3098 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a single 4–Lead DIP type package. Features: Collector–Emitter Voltage: VCEO= 55V Min Current Transfer Ratio: IC/IF= 100 Min Isolation Voltage: BVS= 5000Vr

NTE

Infrared Emitting Diode Bi-Directional

Features: Bi–Directional Light Emission Type High Output: e= 1mW Typ at IF= 20mA Applications: Light Source for Tape End Detector for VHS type VCR’s

NTE

Integrted Circuit Voltage Regulator

Description: The NTE309K is a complete 5V regulator fabricated on a single silicon chip. It is designed for local regulation on digital logic cards, eliminating the distribution problems associated with single–point regulation. With the TO3 power package, the available output current is g

NTE

Amplifier Transistors(PNP)

Amplifier Transistors PNP Silicon

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)

MOSPEC

统懋

5-Volt Regulator

文件:252.69 Kbytes Page:8 Pages

NSC

国半

5-Volt Regulator

文件:252.69 Kbytes Page:8 Pages

NSC

国半

5-Volt Regulator

文件:252.69 Kbytes Page:8 Pages

NSC

国半

替换型号 功能描述 生产厂家 企业 LOGO 操作

TOSHIBA Photocoupler Infrared LED + Photo IC

TOSHIBA

东芝

Line Receiver Feedback Control

TOSHIBA

东芝

PHOTOCOUPLER GaAAs IRED PHOTO IC

TOSHIBA

东芝

Microprocessor System Interfaces

TOSHIBA

东芝

DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER

TOSHIBA

东芝

NTE309产品属性

  • 类型

    描述

更新时间:2026-5-20 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NTE
23+
DIP6 SOP6
15000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
NTE
25+
DIP-SOP
3362
全新原装正品支持含税
NTE
24+
TO-3
542
26+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
2022+
30
全新原装 货期两周
NTE
2011+
DIPSOP8
20000
原装现货

NTE309数据表相关新闻