Description:

The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current, high electrical isolation, small package size and low cost such as interfacing and coupling systems, phase feedback controls, solid–state relays and general purpose switching circuits.

Features:

High Transfer Ratio with Low LED Drive

High Electrical Isolation

Low Collector–Emitter Saturation Voltage