Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

Optoisolator NPN Transistor Output

Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6–Lead DIP type package coupled with a silicon phototransistor.

Optoisolator NPN Darlington Transistor Output

Description: The NTE3982 consists of a gallium arsenide infrared emitting diode coupled with a silicon Darlington connected transistor in a low cost plastic package with lead spacing compatible with dual–in–line packages.

Optoisolator NPN Darlington Transistor Output

Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo–darlington in a 6–Lead DIP type package. Features: • High Sensitivity: 1mA on the Input will Sink a TTL gate • High Isolation: 3550VDC, 1012Ω, 0.5pF

Optoisolater NPN Photo Darlington Output

Features: ● High Isolation Voltage–7500V

Optoisolator Photon Coupled Bilateral Analog FET

Description: The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals.

Optoisolator Dual NPN Transistor Output

Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability. Features: ● Two isolated

Optoisolator High Speed, Open Collector, NAND Gate Output

Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor capable of sinking 50mA. The open collector output provide

Optoisolator Silicon NPN High Voltage Phototransistor Output

Description: The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in a 6–Lead DIP type package designed for applications requiring high voltage output. This device is particularly useful in copy machines and solid state relays. Features: High

Optoisolator AC Input, Silicon NPN Phototransistor Output

Description: The NTE3089 consists of two gallium arsenide LEDs connected in inverse parallel and coupled with a silicon phototransistor in a 6–Lead DIP type package. Features: ● AC or Polarity Insensitive Inputs ● Fast Switching Speeds ● Built–In Reverse Polarity Input Protection ● High Isol

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

2 (50.8 mm) Single Turn Conductive Plastic Precision Potentiometer

FEATURES • Bushing mount and servo mount types available • Virtually infinite resolution • Up to 6 sections available • Rotational life exceeds 20 million shaft revolutions • Co-molded track and multi-finger wiper provide low noise signal • Large ohmic value range: 500  to 100 k • Mater

Compact, Portable Military Fast Ethernet Switch

FEATURES Driven by rapid advancement and lower costs, Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. The MILTECH 308’s ultra-compact, IP68 rugged construction, and Fast Ethernet make it the ideal switching

GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz

General Description The HMC308 & HMC308E are low cost MESFET MMIC amplifiers that operate from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifi er stage or used with external matching for optimized narrow band applications. Wi

Test insulation to 2000M廓

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GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz

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