Description:

The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion–free control of low AC and DC analog signals.

Features:

As A Remote Variable Resistor

• ≤ 100Ω to ≥ 300MΩ

• ≥ 99.9 Linearity

• ≤ 15pF Shunt Capacitance

• ≥ 100GΩ I/O Isolation Resistance

As An Analog Signal Switch

• Extremely Low Offset Voltage

• 60VP–P Signal Capability

• No Charge Injection or Latchup

• ton, toff ≤ 15µs