Germanium PNP Transistor High Current, High Gain Amp

Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages.

Germanium Transistors

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

Integrated Circuit NMOS, 16K UV Erasable PROM

Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package a

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: • High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC

Silicon Darlington Complementary Power Amplifiers

Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications. Features: • High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC

Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM

Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate MOS processing. With its single +5V power supply and with an access time of 200ns, the NTE2732A is i

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

Integrated Circuit NMOS, 64K Erasable EPROM, 200ns

Description: The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and of

Silicon NPN Transistor Broadband RF Amp

Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features: • Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz • High Current–Gain

MICROPROCESSOR & MEMORY CIRCUITS

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Complementary Transistors

Integrated Circuit NMOS, 16K UV Erasable PROM

MICROPROCESSOR & MEMORY CIRCUITS

文件：165.96 Kbytes Page：1 Pages