Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

Complementary Transistors

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits

MICROPROCESSOR & MEMORY CIRCUITS

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Integrated Circuit NMOS, 8K UV EPROM, 450ns

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

High Voltage (Plate) & Filament - 32 VA to 454 VA

Features Primary 115 VAC, 60 Hz. - except as noted For universal primaries and/or 50/60 Hz. operation and other output voltagecombinations please see our 300 Series Enclosed, 4 hole, chassis mount. Minimum 6 long leads. Units can be run full wave bridge or full wave C.T. Class A insulation (

Commercial Miniature 5/8 (16mm) Diameter Composition Variable Resistors

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Thru-Bolts and Mounting Brackets

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