Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

Complementary Transistors

Description:\nThe NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.Features:\n• High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V\n• Collector–Emitter Su

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description:\nThe NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. Al

Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits

MICROPROCESSOR & MEMORY CIRCUITS

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2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

Silicon planar type

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Silicon planar type

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Silicon planar type

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