Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

Integrated Circuit NMOS, 16K UV Erasable PROM

Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package a

MICROPROCESSOR & MEMORY CIRCUITS

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

Rectangular Case, High-Current and High-Voltage Circuits

Types 271, 272, 273 are designed for frequencies ranging from 100 kHz to 3 MHz and are well suited for high-current and high-voltage radio transmitter circuit applications. Cast in rectangular cases, these capacitors are electrically equivalent to MIL-C-5 Styles CM65 through CM73 in capacitance

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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64K(8K x 8) UV ERASABLE PROMs

Bandpass Filter

2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY

2048-word x 8bit Erasable and Electrically Programmable Only Memory

16K (2K x 8) UV ERASABLE PROM

NMOS 16K 2K x 8 UV EPROM

16K (2K x 8) UV ERASABLE PROM