Silicon NPN Transistor High Voltage Amp/Switch

Features: • High Breakdown Voltage, High Reliability • Low Output Capacitance • Wide ASO Range

Silicon NPN Transistor High Voltage Amp/Switch

Features: • High Breakdown Voltage, High Reliability • Low Output Capacitance • Wide ASO Range

Silicon NPN Transistor Horizontal Output for HDTV

Features: • High Breakdown Voltage: V(BR)CBO = 2000V Min • Isolated TO220 Type Package

Silicon NPN Transistor High Voltage Amp/Switch

Features: • High Breakdown Voltage: V(BR)CEO = 2100V Min • Low Output Capacitance • Wide ASO Range • Isolated TO220 Type Package

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage, High Reliability • Fast Switching Speed • Wide ASO

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage, High Reliability • Fast Switching Speed • Wide ASO Range

Silicon NPN Transistor High Voltage, High Speed Switch

Silicon NPN Transistor High Voltage, High Speed Switch Features: ● High Breakdown Voltage and Reliability ● Fast Switching Speed ● Wide ASO

Silicon NPN Transistor High Voltage, High Current Switch

Features: High Breakdown Voltage, Reliability fast Switching Speed Wide ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector–Emitter Voltage, VCEO . . . . . . . . . . .

Silicon NPN Transistor High Voltage Amp/Switch

Bi-Polar transistor Selector Guide

Bi-Polar transistor Selector Guide

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

8-bit addressable latch

DESCRIPTION The 74AHC/AHCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages

High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages