NPN SILICON HIGH VOLTAGE TRANSISTORS

NPN SILICON HIGH VOLTAGE TRANSISTORS INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS.

Small Signal Transistors

High Voltage Power Transistor

Features: • Devices with breakdown voltages of 160V minimum • NPN Silicon High Voltage Power Transistors Description Transistor, NPN, TO-39

NPN HIGH VOLTAGE VIDEO AMPLIFIER

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

HIGH VOLTAGE VIDEO AMPLIFIERS

DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：管件 描述：TRANS NPN 300V 0.1A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN HIGH VOLTAGE VIDEO AMPLIFIER

Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Trans GP BJT NPN 300V 0.1A 3-Pin TO-39

Bipolar NPN Device in a Hermetically sealed TO39

文件：15.37 Kbytes Page：1 Pages

8-bit addressable latch

DESCRIPTION The 74AHC/AHCT259 are high-speed Si-gate CMOS devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages

High Voltage Transistors

文件：133.29 Kbytes Page：4 Pages