Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 10A • Monolithic Cons

1/2 (12.7 mm) Conductive Plastic and Cermet Potentiometers

FEATURES • Model 248: 0.5 W at 70 °C (conductive plastic element) • Model 249: 1 W at 70 °C (cermet element) • Cost effective panel potentiometer • PCB mounting • Tests according to CECC 41000 or IEC 60393-1 • Material categorization: for definitions of compliance please see www.vishay.com

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175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

1/2 (12.7 mm) Conductive Plastic & Cermet Potentiometers

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Ratio-metric Linear Hall Effect Sensor

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