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BD249晶体管资料

  • BD249别名:BD249三极管、BD249晶体管、BD249晶体三极管

  • BD249生产厂家:美国得克萨斯仪表公司

  • BD249制作材料:Si-NPN

  • BD249性质:低频或音频放大 (LF)_功率放大 (L)

  • BD249封装形式:直插封装

  • BD249极限工作电压:45V

  • BD249最大电流允许值:25A

  • BD249最大工作频率:<1MHZ或未知

  • BD249引脚数:3

  • BD249最大耗散功率:125W

  • BD249放大倍数

  • BD249图片代号:B-62

  • BD249vtest:45

  • BD249htest:999900

  • BD249atest:25

  • BD249wtest:125

  • BD249代换 BD249用什么型号代替:BD257/45,TIP35,3DD71B,

型号 功能描述 生产厂家 企业 LOGO 操作
BD249

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

BD249

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

BD249

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

BD249

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

BD249

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD249

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

BD249

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD249

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

BD249

三极管

MOSPEC

统懋

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

Complementary Power Transistor

Description: Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO(sus) = 100V (Min.) • DC Current Gain hFE = 25 (Min.) at IC = 1.5A • Current Gain Bandwidth Product fT = 3MHz (Min.) at IC = 1A

MULTICOMP

易络盟

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

TRANS NPN 60V 25A

BOURNS

伯恩斯

三极管

MOSPEC

统懋

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-218-3 包装:管件 描述:TRANS NPN 80V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-218-3 包装:卷带(TR) 描述:TRANS NPN 100V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Square Type

文件:31.34 Kbytes Page:1 Pages

PANASONIC

松下

BD249产品属性

  • 类型

    描述

  • VCBO (V):

    55

  • VCEO (V):

    45

  • PD (W):

    125

  • PACKAGE:

    TO-3P

  • NPN:

    BD249

  • PNP:

    BD250

  • HFE (Min/Max):

    10

  • IC/VCE (A/V):

    15/4.0

  • VCE(SAT) (V):

    1.8

  • IC / IB (A/mA):

    15/1.5A

更新时间:2026-5-14 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/FSC
23+
TO-3P
13880
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST全系列
25+23+
TO-3P
26480
绝对原装正品全新进口深圳现货
POWER
2447
TO-247
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
23+
SDM/DIP
7300
专注配单,只做原装进口现货
ST/意法
23+
TO3P
50000
全新原装正品现货,支持订货
MOT
25+
TO-247
25
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
26+
TO-247
86720
全新原装正品价格最实惠 假一赔百
Bourns Inc.
25+
SOT-93
18746
样件支持,可原厂排单订货!
Bourns Inc.
25+
SOT-93
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
24+
TO-218
15000
原装现货热卖

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