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BD249晶体管资料

BD249别名：BD249三极管、BD249晶体管、BD249晶体三极管
BD249生产厂家：美国得克萨斯仪表公司
BD249制作材料：Si-NPN
BD249性质：低频或音频放大（LF）_功率放大（L）
BD249封装形式：直插封装
BD249极限工作电压：45V
BD249最大电流允许值：25A
BD249最大工作频率：<1MHZ或未知
BD249引脚数：3
BD249最大耗散功率：125W
BD249放大倍数：
BD249图片代号：B-62
BD249vtest：45
BD249htest：999900
BD249atest：25
BD249wtest：125

BD249代换 BD249用什么型号代替：BD257/45,TIP35,3DD71B,

型号	功能描述	生产厂家企业	LOGO
BD249	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD249	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	ISC 无锡固电	ISC
BD249	Silicon NPN Power Transistor DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD249	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	SAVANTIC	SAVANTIC
BD249	NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD249	Silicon NPN Power Transistors 文件：146.85 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD249	三极管	MOSPEC 统懋	MOSPEC
BD249A	NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD249A	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	SAVANTIC	SAVANTIC
BD249A	Silicon NPN Power Transistor DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD249A	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	ISC 无锡固电	ISC
BD249A	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249A	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD249A	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249B	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249B	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249B	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD249B	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	ISC 无锡固电	ISC
BD249B	Silicon NPN Power Transistor DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD249B	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	SAVANTIC	SAVANTIC
BD249B	NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD249C	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	SAVANTIC	SAVANTIC
BD249C	Silicon NPN Power Transistor DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD249C	NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	POINN	POINN
BD249C	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current	ISC 无锡固电	ISC
BD249C	Complementary Power Transistor Description: Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO(sus) = 100V (Min.) • DC Current Gain hFE = 25 (Min.) at IC = 1.5A • Current Gain Bandwidth Product fT = 3MHz (Min.) at IC = 1A	MULTICOMP 易络盟	MULTICOMP
BD249C	POWER TRANSISTORS(25A,125W) COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
BD249C	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249C	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249C	NPN High?뭁ower Transistor NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*	ONSEMI 安森美半导体	ONSEMI
BD249CG	NPN High?뭁ower Transistor NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*	ONSEMI 安森美半导体	ONSEMI
BD249-S	NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available	BOURNS 伯恩斯	BOURNS
BD249A	Silicon NPN Power Transistors 文件：146.85 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD249A-S	TRANS NPN 60V 25A	BOURNS 伯恩斯	BOURNS
BD249B	三极管	MOSPEC 统懋	MOSPEC
BD249B	Silicon NPN Power Transistors 文件：146.85 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD249B-S	封装/外壳：TO-218-3 包装：管件描述：TRANS NPN 80V 25A SOT93 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
BD249C	Silicon NPN Power Transistors 文件：146.85 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD249C-S	封装/外壳：TO-218-3 包装：卷带（TR）描述：TRANS NPN 100V 25A SOT93 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
LN249RPX	Square Type 文件：31.34 Kbytes Page：1 Pages	PANASONIC 松下	PANASONIC

BD249产品属性

类型
描述
VCBO (V)：
55
VCEO (V)：
45
PD (W)：
125
PACKAGE：
TO-3P
NPN：
BD249
PNP：
BD250
HFE (Min/Max)：
10
IC/VCE (A/V)：
15/4.0
VCE(SAT) (V)：
1.8
IC / IB (A/mA)：
15/1.5A

BD249供应商更多...

更新时间：2026-7-23 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	BD249C	ST	2026+	TO-3P	134	原装正品假一罚十!	询价
深圳市得捷芯城科技有限公司	BD249-S	Bourns Inc.	25+	SOT-93	18798	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市福田区绿盛电子商行	BD249C	TOSHIBA	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市腾亿芯科技有限公司	BD249D	ST	25+	TO-3P	20000	原装，请咨询	询价
千层芯半导体(深圳)有限公司	BD249	ST	24+	TO-218	15000	原装现货热卖	询价
深圳市富芯乐电子科技有限公司	BD249C	ST	24+	TO-247	5000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市旺财半导体有限公司	BD249C-S	BOURNS	25+		66880	原装正品，欢迎询价	询价
深圳市振宏微科技有限公司	BD249	TI	25+	NA	2898	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	BD249C	ST全系列	25+23+	TO-3P	26480	绝对原装正品全新进口深圳现货	询价
芯有半导体（深圳）有限公司	BD249CN	PECOR	05+	原厂原装	751	只做全新原装真实现货供应	询价

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找IC，尽在114IC

BD249晶体管资料

BD249产品属性

BD249供应商更多...

BD249芯片相关品牌

BD249规格书下载地址

BD249参数引脚图相关

BD249数据表相关新闻

BD433M5WFPJ-CZE2

BD18353EFV-ME2

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DdatasheetPDF页码索引