BD249晶体管资料

  • BD249别名:BD249三极管、BD249晶体管、BD249晶体三极管

  • BD249生产厂家:美国得克萨斯仪表公司

  • BD249制作材料:Si-NPN

  • BD249性质:低频或音频放大 (LF)_功率放大 (L)

  • BD249封装形式:直插封装

  • BD249极限工作电压:45V

  • BD249最大电流允许值:25A

  • BD249最大工作频率:<1MHZ或未知

  • BD249引脚数:3

  • BD249最大耗散功率:125W

  • BD249放大倍数

  • BD249图片代号:B-62

  • BD249vtest:45

  • BD249htest:999900

  • BD249atest:25

  • BD249wtest:125

  • BD249代换 BD249用什么型号代替:BD257/45,TIP35,3DD71B,

型号 功能描述 生产厂家&企业 LOGO 操作
BD249

POWERTRANSISTORS(25A,125W)

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

MOSPEC

MOSPEC

MOSPEC
BD249

NPNSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
BD249

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns
BD249

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD249

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

SAVANTIC
BD249

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns
BD249

SiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-lc=25A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C •ComplementtoTypeBD250/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BD249

SiliconNPNPowerTransistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NPNSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERTRANSISTORS(25A,125W)

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

MOSPEC

MOSPEC

MOSPEC

SiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-lc=25A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C •ComplementtoTypeBD250/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-lc=25A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C •ComplementtoTypeBD250/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

POWERTRANSISTORS(25A,125W)

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

MOSPEC

MOSPEC

MOSPEC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NPNHigh?뭁owerTransistor

NPNHigh−PowerTransistor NPNhigh−powertransistorsareforgeneral−purposepoweramplifierandswitchingapplications. Features •ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V •EpoxyMeetsUL94V−0@0.125 •Pb−FreePackageisAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-3PNpackage ·ComplementtotypeBD250/A/B/C ·125Wat25°Ccasetemperature ·25Acontinuouscollectorcurrent

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

NPNSILICONPOWERTRANSISTORS

●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

POWERTRANSISTORS(25A,125W)

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

MOSPEC

MOSPEC

MOSPEC

SiliconNPNPowerTransistor

DESCRIPTION •CollectorCurrent-lc=25A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=45V(Min)-BD249;60V(Min)-BD249A 80V(Min)-BD249B;100V(Min)-BD249C •ComplementtoTypeBD250/A/B/C APPLICATIONS •Designedforuseingeneralpurposepoweramplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNHigh?뭁owerTransistor

NPNHigh−PowerTransistor NPNhigh−powertransistorsareforgeneral−purposepoweramplifierandswitchingapplications. Features •ESDRatings:MachineModel,C;>400V HumanBodyModel,3B;>8000V •EpoxyMeetsUL94V−0@0.125 •Pb−FreePackageisAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththeBD250Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

Bourns

SiliconNPNPowerTransistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

封装/外壳:TO-218-3 包装:管件 描述:TRANS NPN 80V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

BournsBourns Inc.

伯恩斯(邦士)

Bourns

SiliconNPNPowerTransistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

封装/外壳:TO-218-3 包装:卷带(TR) 描述:TRANS NPN 100V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

BournsBourns Inc.

伯恩斯(邦士)

Bourns

1/2(12.7mm)ConductivePlasticandCermetPotentiometers

FEATURES •Model248:0.5Wat70°C(conductiveplastic element) •Model249:1Wat70°C(cermetelement) •Costeffectivepanelpotentiometer •PCBmounting •TestsaccordingtoCECC41000orIEC60393-1 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com

VishayVishay Siliconix

威世科技

Vishay

1/2(12.7mm)ConductivePlastic&CermetPotentiometers

文件:97.21 Kbytes Page:3 Pages

VishayVishay Siliconix

威世科技

Vishay

SCHOTTKYRECTIFIER

文件:114.21 Kbytes Page:5 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PrivacyMaskFunction

文件:186.09 Kbytes Page:2 Pages

A1PROSA1 PROs co., Ltd.

韩国A1 PROS电子韩国A1 PROS电子有限公司

A1PROS

RS485OPTION

文件:174.52 Kbytes Page:2 Pages

A1PROSA1 PROs co., Ltd.

韩国A1 PROS电子韩国A1 PROS电子有限公司

A1PROS

BD249产品属性

  • 类型

    描述

  • 型号

    BD249

  • 功能描述

    两极晶体管 - BJT 125W NPN Silicon

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-20 8:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
TO-3P
97628
终端免费提供样品 可开122%增值税发票
ST/意法
22+
TO-3P
97628
ST
TO-218
68900
原包原标签100%进口原装常备现货!
ST/意法
23+
NA/
3268
原装现货,当天可交货,原型号开票
ST
17+
TO-218
15000
原装现货热卖
ST/意法
23+
TO-218
90000
只做原厂渠道价格优势可提供技术支持
TI
23+
NA
2898
专做原装正品,假一罚百!
ST
18+
TO-3P
3600
特价质量保证,假一赔十,公司现货库存,原装进口
TO-3PN
10000
全新
FAIRCHI
21+
TO-3P
12588
原装正品,自己库存 假一罚十

BD249芯片相关品牌

  • Altera
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  • HY
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  • MOLEX2
  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

BD249数据表相关新闻