BD249晶体管资料

  • BD249别名:BD249三极管、BD249晶体管、BD249晶体三极管

  • BD249生产厂家:美国得克萨斯仪表公司

  • BD249制作材料:Si-NPN

  • BD249性质:低频或音频放大 (LF)_功率放大 (L)

  • BD249封装形式:直插封装

  • BD249极限工作电压:45V

  • BD249最大电流允许值:25A

  • BD249最大工作频率:<1MHZ或未知

  • BD249引脚数:3

  • BD249最大耗散功率:125W

  • BD249放大倍数

  • BD249图片代号:B-62

  • BD249vtest:45

  • BD249htest:999900

  • BD249atest:25

  • BD249wtest:125

  • BD249代换 BD249用什么型号代替:BD257/45,TIP35,3DD71B,

型号 功能描述 生产厂家 企业 LOGO 操作
BD249

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

BD249

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD249

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

BD249

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

BD249

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

BD249

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

BD249

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD249

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

BD249

三极管

MOSPEC

统懋

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Bourns

伯恩斯

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

TRANS NPN 60V 25A

Bourns

伯恩斯

三极管

MOSPEC

统懋

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-218-3 包装:管件 描述:TRANS NPN 80V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-218-3 包装:卷带(TR) 描述:TRANS NPN 100V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

1/2 (12.7 mm) Conductive Plastic and Cermet Potentiometers

FEATURES • Model 248: 0.5 W at 70 °C (conductive plastic element) • Model 249: 1 W at 70 °C (cermet element) • Cost effective panel potentiometer • PCB mounting • Tests according to CECC 41000 or IEC 60393-1 • Material categorization: for definitions of compliance please see www.vishay.com

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

1/2 (12.7 mm) Conductive Plastic & Cermet Potentiometers

文件:97.21 Kbytes Page:3 Pages

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER

文件:114.21 Kbytes Page:5 Pages

IRF

Ratio-metric Linear Hall Effect Sensor

文件:1.1101 Mbytes Page:3 Pages

MAT

美斯特类比

BD249产品属性

  • 类型

    描述

  • 型号

    BD249

  • 功能描述

    两极晶体管 - BJT 125W NPN Silicon

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-24 23:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
ZIP
8336
公司现货库存,支持实单
ST/意法
24+
NA/
5936
原装现货,当天可交货,原型号开票
TEXET
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
25+
TO-3P
134
原装正品,假一罚十!
ST
24+
TO-218
15000
原装现货热卖
TOSHIBA
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
PECOR
05+
原厂原装
751
只做全新原装真实现货供应
TI
23+
NA
2898
专做原装正品,假一罚百!
ST全系列
25+23+
TO-3P
26480
绝对原装正品全新进口深圳现货
ST
26+
TO-3P
60000
只有原装 可配单

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