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型号 功能描述 生产厂家 企业 LOGO 操作
BD249C

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

BD249C

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

POINN

BD249C

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

BD249C

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

BD249C

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

SAVANTIC

BD249C

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type BD250/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current

ISC

无锡固电

BD249C

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD250 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

BOURNS

伯恩斯

BD249C

Silicon NPN Power Transistor

DESCRIPTION • Collector Current -lc= 25A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A 80V(Min)- BD249B; 100V(Min)- BD249C • Complement to Type BD250/A/B/C APPLICATIONS • Designed for use in general purpose power amplifie

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD249C

Complementary Power Transistor

Description: Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emitter sustaining Voltage. VCEO(sus) = 100V (Min.) • DC Current Gain hFE = 25 (Min.) at IC = 1.5A • Current Gain Bandwidth Product fT = 3MHz (Min.) at IC = 1A

MULTICOMP

易络盟

BD249C

Silicon NPN Power Transistors

文件:146.85 Kbytes Page:3 Pages

SAVANTIC

BD249C

三极管

MOSPEC

统懋

BD249C

NPN High−Power Transistor

ONSEMI

安森美半导体

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

TRANS NPN 100V 25A

BOURNS

伯恩斯

封装/外壳:TO-218-3 包装:卷带(TR) 描述:TRANS NPN 100V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

Square Type

文件:31.34 Kbytes Page:1 Pages

PANASONIC

松下

BD249C产品属性

  • 类型

    描述

  • VCBO (V):

    115

  • VCEO (V):

    100

  • PD (W):

    125

  • PACKAGE:

    TO-3P

  • NPN:

    BD249C

  • PNP:

    BD250C

  • HFE (Min/Max):

    10

  • IC/VCE (A/V):

    15/4.0

  • VCE(SAT) (V):

    1.8

  • IC / IB (A/mA):

    15/1.5A

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Bourns Inc.
25+
SOT-93
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
2026+
TO-3P
134
原装正品 假一罚十!
TOSHIBA
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
TEXET
23+
NA
111
专做原装正品,假一罚百!
ST
24+
TO-218
15000
原装现货热卖
ST全系列
25+23+
TO-3P
26480
绝对原装正品全新进口深圳现货
Bourns Inc.
25+
SOT-93
18746
样件支持,可原厂排单订货!
ST
2012
TO-3P
158
全新 发货1-2天
24+
TO-3PN
10000
全新
PECOR
05+
原厂原装
751
只做全新原装真实现货供应

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